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| savantic semiconductor product specification silicon npn power transistors 2SC2517 d escription with to-220c package low collector saturation voltage wide area of safe operation applications switching regulators dc-dc converters high frequency power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 12 v i c collector current 5 a i cm collector current-peak 10 a i b base current 2.5 a t a =25 1.5 p t total power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC2517 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =3.0a ; i b1 =0.3a;l=1mh 100 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 0.6 v v besat base-emitter saturation voltage i c =3a; i b =0.3a 1.5 v i cbo collector cut-off current v cb =100v ;i e =0 10 a i cex collector cut-off current v ce =100v; v be =-1.5v ta=125 10 1 a ma i ebo emitter cut-off current v eb =10v ;i c =0 10 a h fe-1 dc current gain i c =0.2 a ; v ce =5v 40 h fe-2 dc current gain i c =2 a ; v ce =5v 40 200 switching times t on turn-on time 0.5 s t s storage time 2.5 s t f fall time i c =3a; i b1 =-i b2 =0.3a r l =17 @ ; v cc =50v 0.5 s h fe-2 classifications m l k 40-80 60-120 100-200 savantic semiconductor product specification 3 silicon npn power transistors 2SC2517 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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